Method for manufacturing a nonvolatile memory device

Details Method for manufacturing a nonvolatile memory device Method for manufacturing a nonvolatile memory device

2008-06-27

2010-10-26

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21646, C257SE21662, C257SE21663, C257SE21665

Reexamination Certificate

active

07820499

ABSTRACT:
In a method for manufacturing a nonvolatile memory device, an etch mask layer formed on a dielectric layer to define contact holes in the dielectric layer is slope-etched to form an etch mask pattern having an opening wider at the upper end thereof than the lower end thereof. Thus, the contact holes are defined in the dielectric layer to have a finer size than the upper end of the opening of the etch mask pattern. The method for manufacturing a nonvolatile memory device includes forming an etch mask pattern on a dielectric layer such that a width of a lower end of each opening defined in the etch mask pattern is less than a width of an upper end thereof; and defining contact holes by removing portions of the dielectric layer using the etch mask pattern.

REFERENCES:
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patent: 6867098 (2005-03-01), Park et al.
patent: 7541255 (2009-06-01), Kim et al.
patent: 1020020052459 (2002-07-01), None
patent: 1020060076497 (2006-07-01), None
patent: 1020060088637 (2006-08-01), None

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