Method for manufacturing a multiple walled capacitor of a semico

Details Method for manufacturing a multiple walled capacitor of a semico Method for manufacturing a multiple walled capacitor of a semico

1993-07-15

1995-03-21

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

053995180

ABSTRACT:
A method for manufacturing a double-cylindrical storage electrode of a capacitor of a semiconductor memory device, utilizes an outer etching mask for forming an outer cylinder and an inner etching mask for forming an inner cylinder. After forming a conductive structure on a semiconductor substrate, an outer etching mask for forming an outer cylinder and an inner etching mask for forming an inner cylinder are formed on the conductive structure. Then, the conductive structure is anisotropically etched using the outer and inner etching masks, thereby forming a double-cylindrical first electrode. Since a double-cylindrical storage electrode can be obtained from a single conductive layer, the influence of native oxidation circumvented. In addition, the double-cylindrical storage electrode of the capacitor according to the present invention decreases the risk of structural fragmenting because the electrode is obtained from one material layer, instead of a combination of layers as is conventionally-known. Also, the storage electrode of the present invention has no sharp edges, so that leakage current can be minimized or avoided.

REFERENCES:
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5158905 (1992-10-01), Ahn
patent: 5192702 (1993-03-01), Tseng
patent: 5266512 (1993-11-01), Kirsch

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