Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-05-14
1999-10-12
Booth, Richard A.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438305, 438775, 438776, H01L 21336, H01L 2131, H01L 21469
Patent
active
059666064
ABSTRACT:
A side-wall film of a gate electrode is fabricated as a two-layer structure including an underlying thin silicon nitride film and a relatively thick silicon oxide film. The silicon nitride film covers and protects the edge of the gate oxide film against formation of a gate bird's beak at the edge of the gate oxide film. The side-wall contacts with the silicon substrate substantially at the thick silicon oxide film of the side-wall, which prevents formation of a carrier trap area adjacent to the channel area. The bottom of the side-wall may be a nitride-doped silicon oxide instead.
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Shimizu et al., "Advanced Ion Implantation and Rapid Thermal Annealing Technologies for Highly Reliable 0.25um Dual Gate CMOS", IEEE Symposium on VLSI Technology Digest of Technical Papers (1996).
Togo et al., "Novel Deep Sub-Quarter Micron PMOSFETs with Ultra-shallow Junctions Utilizing Boron Diffusion from Poly-Si/Oxide (BDSOX)", IEEE Symposium on VLSI Tech. Digest of Tech. Papers (1994).
Booth Richard A.
NEC Corporation
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