Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-28
2006-03-28
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S290000
Reexamination Certificate
active
07018880
ABSTRACT:
The present invention provides, in one embodiment, a method of reducing 1/f noise in a metal oxide semiconductor (MOS) device (100). The method comprises forming an oxide layer (110) on a silicon substrate (105) and depositing a polysilicon layer (115) on the oxide layer (110). The method further includes implanting a fluorine dopant (130) into the polysilicon layer (115) at an implant dose of at least about 4×1014atoms/cm2. The polysilicon layer (115) is thermally annealed such that a portion of the fluorine dopant (130) is diffused into the oxide layer (110) to thereby reduce a 1/f noise of the MOS device (100). Other embodiments of the provide a MOS device (300) manufactured by the above-described method and a method of manufacturing an integrated circuit (500) that includes the above-described method.
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Anderson Larry B.
Hao Pinghai
Hou Fan Chi
Imam Zafar
Pan Shanjen
Keagy Rose Alyssa
Telecky , Jr. Frederick J.
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