Method for manufacturing a memory

Details Method for manufacturing a memory Method for manufacturing a memory

2011-07-05

2011-07-05

Pham, Thanhha (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S211000, C438S593000, C257SE21422

Reexamination Certificate

active

07972924

ABSTRACT:
A method for manufacturing a memory includes first providing a substrate with a horizontally adjacent control gate region and floating gate region which includes a sacrificial layer and sacrificial sidewalls, removing the sacrificial layer and sacrificial sidewalls to expose the substrate, forming dielectric sidewalls adjacent to the control gate region, forming a floating gate dielectric layer on the exposed substrate and forming a floating gate layer adjacent to the dielectric sidewalls and on the floating gate dielectric layer.

REFERENCES:
patent: 2007/0004137 (2007-01-01), Oh
patent: 2009/0111229 (2009-04-01), Steimle et al.
patent: 200509376 (2005-03-01), None
patent: 200837896 (2008-09-01), None

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