Method for manufacturing a laterally diffused metal oxide...

Details Method for manufacturing a laterally diffused metal oxide... Method for manufacturing a laterally diffused metal oxide...

2001-01-04

2009-12-29

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S542000, C438S585000, C257SE21001

Reexamination Certificate

active

07638380

ABSTRACT:
A laterally diffused metal oxide semiconductor (LDMOS) device and a method of manufacture therefor. The method of manufacturing the LDMOS device includes forming an amorphous region in a semiconductor substrate between isolation structures and adjacent a gate structure, by implanting an amorphizing element, such as silicon or germanium, in the semiconductor substrate. The method further includes diffusing a channel dopant laterally in the amorphous region, to form a first portion of a channel.

REFERENCES:
patent: 6255154 (2001-07-01), Akaishi et al.
patent: 2004/0087120 (2004-05-01), Feudel et al.

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