Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-09-21
2008-12-16
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S299000, C438S303000, C438S308000, C438S653000, C438S689000, C257SE21293
Reexamination Certificate
active
07465635
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device. The method for manufacturing the semiconductor device, among other steps, may include forming a gate structure over a substrate, forming at least a portion of gate sidewall spacers proximate sidewalls of the gate structure, and subjecting the at least a portion of the gate sidewall spacers to an energy beam treatment, the energy beam treatment configured to change a stress of the at least a portion of the gate sidewall spacers, and thus change a stress in the substrate therebelow.
REFERENCES:
patent: 7002209 (2006-02-01), Chen et al.
patent: 7005357 (2006-02-01), Ngo et al.
patent: 2006/0014366 (2006-01-01), Currie
patent: 2006/0105106 (2006-05-01), Balseanu et al.
patent: 2006/0244074 (2006-11-01), Chen et al.
Ajmera Sameer
Kohli Puneet
Mehrotra Manoj
Zhao Jin
Brady III Wade J.
Lee Kyoung
Richards N Drew
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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