Method for manufacturing a flash memory device

Details Method for manufacturing a flash memory device Method for manufacturing a flash memory device

2006-05-30

2006-05-30

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C257S315000

Reexamination Certificate

active

07052960

ABSTRACT:
A method of manufacturing a flash memory device by carrying out the process of shallow trench isolation (STI) in a memory cell region, so that it decreases an aspect ratio of pattern by forming a field isolation film so as to reduce gap-filling defects due to high density plasma (HDP) and to prevent the smiling effect at a tunnel oxide film so as to improve a programming speed of the flash memory device. The method also conducts the process of self-aligned shallow trench isolation (SA-STI) in a peripheral circuit region by forming a field isolation film, so that it prevents degradation in the characteristics of high and low voltage gate oxide films.

REFERENCES:
patent: 6281050 (2001-08-01), Sakagami
patent: 2004/0056293 (2004-03-01), Saito
patent: 2004/0079972 (2004-04-01), Yoon
patent: 2005/0258471 (2005-11-01), Lee

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