Method for manufacturing a field effect transistor with...

Details Method for manufacturing a field effect transistor with... Method for manufacturing a field effect transistor with...

2011-07-12

2011-07-12

Sarkar, Asok K (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S157000, C438S176000, C257SE21637, C257SE21640

Reexamination Certificate

active

07977195

ABSTRACT:
A method for manufacturing at least one structure for a double grid field effect transistor, including: forming, on an isolating face of a first substrate, a stack comprising successively at least one layer of rear grid material, a layer of rear grid isolator, one semi-conducting zone for each structure to be manufactured, an electrically insulating layer of a front grid, at least one layer of front grid material and a masking element for each structure to be manufactured, placed facing the semi-conducting zone; forming in the at least one layer of front grid material a pattern reproducing a shape of the masking element and comprising etching of the layer of front grid material to eliminate the front grid material outside the pattern; and forming on free faces of the pattern a sacrificial spacer covering a first part of the semi-conducting zone.

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F. Allibert, et al., “Characterization of Ultra-Thin SOI Films for Double-Gate MOSFET's”, IEEE International SOI Conference, Oct. 2002, pp. 187-188.

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