Method for manufacturing a constant current source device

Details Method for manufacturing a constant current source device Method for manufacturing a constant current source device

2008-10-16

2010-11-02

Purvis, Sue (Department: 2826)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE27061

Reexamination Certificate

active

07824974

ABSTRACT:
A constant current source device with over current and over voltage protection function can be directly applied to AC power and DC power, and a method for manufacturing the constant current source device is also disclosed. The device includes a silicon substrate (1), an oxide layer (6) formed in front of the silicon substrate (1), a drain metal (2), a source metal (3) and a gate metal (4) located in front of the oxide layer (6), a P+ guard ring (50), an N+ drain region (52) and an N+ source region (53) implanted in the silicon substrate (1), a P+ substrate region (51) located in the N+ source region (53), and an N− channel region (54) connecting the N+ drain region (52) with the N+ source region (53). The drain metal (2) and the source metal (3) are separately connected with the N+ drain region (52), the N+ source region (53) and the P+ substrate region (51). The source metal (3) and the gate metal (4) are electrically connected through a connection metal (7). The invention constant current source device is generally applied to the field of electronic devices.

REFERENCES:
patent: 3789504 (1974-02-01), Jaddam
patent: 2002/0000568 (2002-01-01), Ohshima et al.
patent: 2003/0173598 (2003-09-01), McKay et al.

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