Method for manufacturing a CMOS image sensor having a...

Details Method for manufacturing a CMOS image sensor having a... Method for manufacturing a CMOS image sensor having a...

2005-02-15

2005-02-15

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S210000, C438S239000, C438S250000, C438S381000, C438S057000, C438S060000

Reexamination Certificate

active

06855595

ABSTRACT:
An image sensor includes a plurality of unit pixels for sensing a light beam to generate an image data. Each of the unit pixels includes, a photoelectric element for sensing a light beam incident thereto and generating photoelectric charges, a transistor including a gate dielectric formed adjacent to the photoelectric element and a gate electrode formed on top of the gate dielectric and a capacitor structure including an insulating film formed on a portion of the photoelectric element and a bottom electrode, wherein the insulating film and the gate dielectric are made of a same material and the bottom electrode and the gate electrode are made of a same material.

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