Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-26
2006-12-26
Kennedy, Jennifer M. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S396000
Reexamination Certificate
active
07153739
ABSTRACT:
The present invention discloses methods for manufacturing a capacitor of a semiconductor device employing doped silicon film as an electrode and an oxide film-nitride film-oxide film as a dielectric film. An interlayer insulating film is formed on a semiconductor substrate. A storage electrode is formed consisting of a doped polysilicon on the interlayer insulating film. A first oxide film is formed on the storage electrode that is subjected to a thermal treatment in an atmosphere containing an n-type impurity to implant the impurity into the first oxide film. A nitride film is formed on the first oxide film, whereby the impurity in the first oxide film is diffused into the nitride film. A second oxide film is formed on the nitride film. A plate electrode is then formed on the second oxide film.
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patent: 6528364 (2003-03-01), Thakur
patent: 6576526 (2003-06-01), Kai et al.
patent: 2002/0022335 (2002-02-01), Chen
patent: 2003/0160274 (2003-08-01), Das et al.
patent: 10-1996-074980 (1996-12-01), None
Lee Tae Hyeok
Park Cheol Hwan
Park Dong Su
Song Chang Rock
Woo Sang Ho
Heller Ehrman LLP
Hynix / Semiconductor Inc.
Kennedy Jennifer M.
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