Method for manufacturing a capacitor electrode structure

Details Method for manufacturing a capacitor electrode structure Method for manufacturing a capacitor electrode structure

2006-07-19

2009-06-09

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S239000, C438S210000, C438S253000, C438S304000, C438S396000, C257SE21008, C257SE21646, C257SE21651

Reexamination Certificate

active

07544562

ABSTRACT:
A method for manufacturing a capacitor electrode structure, according to which the following steps are executed: A substrate is provided, which comprises contact pads arranged in lines and rows on a surface of the substrate. The lines are non-parallel to the rows. A first mold is applied on the substrate. At least one first trench is formed into the first mold above the contact pads. The first trench spans over at least two contact pads arranged in one row. A first dielectric layer is applied on side walls of the at least one first trench for forming first supporting walls. A second mold is applied on the substrate. At least one second trench is formed into the second mold above the contact pads. The second trench spans over at least two contact pads arranged in one line. A second dielectric layer is applied on side walls of the at least one second trench for forming second supporting walls. And a conductive layer is applied on the first and second supporting walls for forming a first electrode of the capacitor structure.

REFERENCES:
patent: 7468306 (2008-12-01), Thies et al.
patent: 2003/0136996 (2003-07-01), Park
patent: 2004/0185613 (2004-09-01), Lin et al.
patent: 2005/0285176 (2005-12-01), Kim
patent: 2006/0046420 (2006-03-01), Manning
patent: 2008/0003740 (2008-01-01), Wunnicke et al.
German Office Action dated May 21, 2007.

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