Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Patent
1996-07-26
1998-04-07
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
438368, 438700, H01L 21331
Patent
active
057364478
ABSTRACT:
A method for manufacturing a bipolar junction transistor which includes the steps of forming spaced-apart base and collector regions in a surface region of a semiconductor substrate, forming a first insulating film on the semiconductor substrate, forming an emitter contact hole in the first insulating film, to thereby expose a first portion of the base region, forming a first conductive layer on the first insulating film and the exposed first portion of said base region, the first conductive layer being comprised of a first conductive material such as polysilicon, ion-implanting impurities into the first conductive layer, forming base and collector contact holes in a first resultant structure comprised of the first insulating film and the first conductive layer, to thereby expose a second portion of the base region spaced-apart from the first portion of the base region, and a portion of the collector region, respectively, forming a second conductive layer on a second resultant structure obtained by the preceding steps, the second conductive layer being comprised of a second conductive material such as in-situ doped polysilicon, and, patterning a third resultant structure comprised of the first and second conductive layers in such a manner as to form an emitter comprised of the first conductive material, an emitter contact in contact with the emitter, a base contact in contact with the exposed second portion of the base region, and a collector contact in contact with the exposed portion of the collector region, the emitter, base, and collector contacts being comprised of the second conductive material and being spaced-apart from one another.
REFERENCES:
patent: 4497106 (1985-02-01), Momma et al.
patent: 5028550 (1991-07-01), Hirakawa
patent: 5100812 (1992-03-01), Yamada et al.
patent: 5296388 (1994-03-01), Kameyama et al.
patent: 5420050 (1995-05-01), Jerome et al.
Chang Dong-soo
Choi Jung-dal
Kim Byeung-chul
Nguyen Tuan H.
Samsung Electronics Co,. Ltd.
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