Method for manufacture of cleaved light emitting semiconductor d

Details Method for manufacture of cleaved light emitting semiconductor d Method for manufacture of cleaved light emitting semiconductor d

1998-04-14

2000-08-22

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

438 33, 438 42, 438 68, 438110, 438113, 438460, 438458, H01L 2146

Patent

active

061071625

ABSTRACT:
A semiconductor device such as a semiconductor layer is formed of a compound semiconductor layer of III-V group such as GaN. In the case where the substrate has not any planes that are easy to cleave which coincides with an easy-to-cleave plane of a semiconductor layer grown on the substrate or the substrate easily succumbs to cleavage, then the semiconductor layer together with the substrate can be broken into chips in an easy-to-cleave plane. The cleaved surface of the semiconductor layer can be positively formed as an optically superior surface. A compound semiconductor layer 2 containing at least one of the elements {Ga, Al, In} and N is formed on the substrate 1. This compound semiconductor layer 2 has a pair of facets of {11-20} plane substantially perpendicular to the substrate 1.

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