Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-26
2005-07-26
Eckert, George (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S268000, C438S272000, C438S273000, C257S329000, C257S330000, C257S332000, C257S335000
Reexamination Certificate
active
06921697
ABSTRACT:
Trench MIS devices including a thick insulative layer at the bottom of the trench are disclosed, along with methods of fabricating such devices. An exemplary trench MOSFET embodiment includes a thick oxide layer at the bottom of the trench, with no appreciable change in stress in the substrate along the trench bottom. The thick insulative layer separates the trench gate from the drain region at the bottom of the trench yielding a reduced gate-to-drain capacitance making such MOSFETs suitable for high frequency applications. In an exemplary fabrication process embodiment, the thick insulative layer is deposited on the bottom of the trench. A thin insulative gate dielectric is formed on the exposed sidewall and is coupled to the thick insulative layer. A gate is formed in the remaining trench volume. The process is completed with body and source implants, passivation, and metallization.
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Chen Kuo-In
Darwish Mohamed N.
Giles Frederick P.
Lui Kam Hong
Terrill Kyle
Eckert George
Ortiz Edgardo
Siliconix Incorporated
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