Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-08-16
2011-08-16
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S275000, C257S407000, C257S365000, C257S388000, C257S406000, C257S413000
Reexamination Certificate
active
07998818
ABSTRACT:
A method for forming a semiconductor element structure is provided. First, a substrate including a first MOS and a second MOS is provided. The gate electrode of the first MOS is connected to the gate electrode of the second MOS, wherein the first MOS includes a first high-K material and a first metal for use in a first gate, and a second MOS includes a second high-K material and a second metal for use in a second gate. Then the first gate and the second gate are partially removed to form a connecting recess. Afterwards, the connecting recess is filled with a conductive material to form a bridge channel for electrically connecting the first metal and the second metal.
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Chen Yi-Wen
Cheng Li-Wei
Chiang Tian-Fu
Chou Cheng-Hsien
Hsu Che-Hua
Green Telly D
Hsu Winston
Margo Scott
United Microelectronics Corp.
Wilczewski Mary
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