Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-04-19
2011-04-19
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S686000, C257SE21295
Reexamination Certificate
active
07928009
ABSTRACT:
A method for making semiconductor electrodes includes provided a wafer. The wafer includes at least one conductive unit, a plurality of first connective units connected to the conductive unit, a plurality of first metal layers connected to the first connective units and a plurality of second connective units connected to the first metal layers. Photo-resist is provided on the first and second connective units. A second metal layer is provided on each of the first metal layers via using an electroplating device. The wafer is cut through the photo-resist, thus forming semiconductor electrodes.
REFERENCES:
patent: 2004/0065551 (2004-04-01), Zhang
patent: 2004/0129573 (2004-07-01), Cohen
Chang Chun-Ling
Chen Ying-Ru
Liu Keng-Shen
Wu Chih-Hung
Atomic Energy Council-Institute of Nuclear Energy Research
Jackson Demian K.
Jackson IPG PLLC
Smith Matthew
Swanson Walter H
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