Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1994-01-31
1997-05-20
Fourson, George
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438238, H01L 2170
Patent
active
056311877
ABSTRACT:
A semiconductor device having an improved protection scheme and a temperature compensated sustaining voltage is provided by integrating a plurality of temperature compensated voltage reference diodes between the drain and the gate of the semiconductor device. The diodes protect the device by clamping the device's sustaining voltage to the total avalanche voltage of the diode. The device will dissipate any excessive energy in the conduction mode rather than in the more stressful avalanche mode. In addition, the plurality of diodes will provide for a temperature compensated sustaining voltage of the semiconductor device. The plurality of diodes are formed back-to-back in polysilicon. The positive temperature coefficient of the avalanching junction of each diode pair is compensated for by the negative temperature coefficient of the forward biased junction.
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Phipps John P.
Robb Stephen P.
Sutor Judy L.
Terry Lewis E.
Fourson George
Jackson Miriam
Motorola Inc.
Pham Long
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