Method for making multilayered coaxial interconnect structure

Details Method for making multilayered coaxial interconnect structure Method for making multilayered coaxial interconnect structure

1998-08-10

2000-05-09

Thomas, Tom

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438618, 438619, 438620, 438623, 438667, 438672, 438675, 438685, 257758, 257759, 257760, 257763, 257768, H01L 21465, H01L 21469, H01L 2147, H01L 21471, H01L 21475, H01L 214763

Patent

active

060603836

ABSTRACT:
A method of forming a multi-layered interconnect structure is provided. A first conductive pattern is formed over an insulation layer. A first dielectric material is deposited over the first conductive pattern, and plugs are formed in the first dielectric material. A second conductive pattern is formed over the first dielectric material and plugs so as to form the multi-layered interconnect structure in part. Then, the first dielectric material is stripped away to leave the multi-layered interconnect structure exposed to air. A thin layer of second dielectric material is deposited so as to coat at least a portion of the interconnect structure. Next, a thin layer of metal is deposited so as to coat the at least a portion of the interconnect structure coated with the thin layer of second dielectric material. A third dielectric material is deposited over the interconnect structure to replace the stripped away first dielectric material.

REFERENCES:
patent: 4933743 (1990-06-01), Thomas et al.
patent: 4948755 (1990-08-01), Mo
patent: 5262353 (1993-11-01), Sun et al.
patent: 5286674 (1994-02-01), Roth et al.
patent: 5436412 (1995-07-01), Ahmad et al.
patent: 5453154 (1995-09-01), Thomas et al.
patent: 5468685 (1995-11-01), Orisaka et al.
patent: 5482900 (1996-01-01), Yang
patent: 5656543 (1997-08-01), Chung
patent: 5656883 (1997-08-01), Christensen
patent: 5666007 (1997-09-01), Chung
patent: 5679982 (1997-10-01), Gardner
patent: 5682062 (1997-10-01), Gaul
patent: 5691280 (1997-11-01), Eckstein et al.
patent: 5691572 (1997-11-01), Chung
patent: 5712768 (1998-01-01), Werther
patent: 5811352 (1998-09-01), Numata et al.
patent: 5817572 (1998-10-01), Chiang et al.
patent: 5824599 (1998-10-01), Schacham-Diamand et al.
patent: 5851849 (1998-12-01), Comizolli et al.
patent: 5858869 (1999-01-01), Chen et al.
patent: 5863832 (1999-01-01), Doyle et al.
patent: 5880030 (1999-03-01), Fang et al.
patent: 5882963 (1999-03-01), Kerber et al.
patent: 5919531 (1999-07-01), Arkles et al.
patent: 5935868 (1999-08-01), Fang et al.

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