Method for making low-topography buried capacitor by a two stage

Details Method for making low-topography buried capacitor by a two stage Method for making low-topography buried capacitor by a two stage

1997-05-06

1999-03-23

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, 438640, H01L 218242

Patent

active

058858652

ABSTRACT:
The present invention discloses a method for making low-topography buried capacitor including the steps of first depositing oxide layers, and then forming a small pre-contact hole by a dry etch method and a large contact hole by a wet etch method while using silicon nitride caps and sidewall spacers previously deposited on the word lines and on the bit lines as etch stop layers. A buried capacitor that has significantly improved topography can be fabricated in a semiconductor device.

REFERENCES:
patent: 5401681 (1995-03-01), Dennison
patent: 5494841 (1996-02-01), Dennison et al.
patent: 5604147 (1997-02-01), Fischer et al.

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