Method for making flash memory

Details Method for making flash memory Method for making flash memory

1998-02-03

2000-09-26

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438304, 438596, H01L 218247

Patent

active

061241709

ABSTRACT:
A flash memory is disclosed including a second conductivity-type substrate having first conductivity-type first and second impurity regions spaced apart from each other by a predetermined distance; a second conductivity-type floating gate formed above part of the first impurity region; a first conductivity-type floating gate formed over the second conductivity-type floating gate; and an insulating layer and first conductivity-type control gate sequentially formed on the first conductivity-type floating gate.

REFERENCES:
patent: 4714519 (1987-12-01), Pfiester
patent: 5063423 (1991-11-01), Fujii et al.
patent: 5081057 (1992-01-01), Corda
patent: 5268585 (1993-12-01), Yamauchi
patent: 5434813 (1995-07-01), Tamura et al.
patent: 5554552 (1996-09-01), Chi
patent: 5753952 (1998-05-01), Mehrad

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