Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-02-19
2000-03-21
Nelms, David
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438248, 438387, H01L 218242, H01L 2120
Patent
active
060402148
ABSTRACT:
A method for the formation of field effect transistors (FETs), and more particularly metal oxide field effect transistors (MOSFETs), comprising the steps of: forming a dielectric stack on a semiconductor structure; defining an etch window on the dielectric stack; defining a gate hole in the dielectric stack by transferring the etch window into the dielectric stack using a reactive ion etching (RIE) process; depositing a side wall layer; removing the side wall layer from horizontal surfaces of the dielectric stack and gate hole such that side wall spacers remain which reduce the lateral size of the gate hole; depositing a gate conductor such that it fills the gate hole; removing the gate conductor covering the portions of the semiconductor structure surrounding the gate hole; removing at least part of the dielectric stack; and removing the side wall spacers.
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R.A. Colclaser, John Wiley & Sons,"Micro Electronics Processing and Device Design" 1980, Chapter 10, pp. 266-269. Month unknown.
Boyd Diane C.
Burns Stuart M.
Hanafi Hussein I.
Taur Yuan
Wille William C.
International Business Machines - Corporation
Lebentritt Michael S.
Nelms David
Townsend Tiffany L.
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