Method for making dual-polysilicon structures in integrated circ

Details Method for making dual-polysilicon structures in integrated circ Method for making dual-polysilicon structures in integrated circ

1998-08-26

2000-06-27

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438700, H01L 21336

Patent

active

060806257

ABSTRACT:
A process for fabricating novel dual-polysilicon structures comprises forming trenches of differing depths in a field oxide that overlies a substrate. Utilizing an ion implantation barrier in the trenches, ion implantation is performed to create self-aligned structures. Importantly, polysilicon is formed in the trenches in a single deposition.

REFERENCES:
patent: 4988639 (1991-01-01), Aomura
patent: 5457329 (1994-08-01), Harada
patent: 5776817 (1997-01-01), Liang

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