Method for making a transistor on a SiGe/SOI substrate

Details Method for making a transistor on a SiGe/SOI substrate Method for making a transistor on a SiGe/SOI substrate

2006-12-26

2006-12-26

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S585000

Reexamination Certificate

active

07153747

ABSTRACT:
A process for producing a MOS-type transistor includes providing a substrate comprising a thin layer of silicon (26), integral with an insulating support (14), and covered with a superficial layer (28) of a semi-conductor material, local etching of the superficial layer to expose the silicon layer in at least one channel region, formation of an insulated gate (50) above the silicon layer in the channel region, and formation of a source and a drain on either side of the channel region, the source and drain extending in the layer of silicon and in the superficial layer.

REFERENCES:
patent: 4660062 (1987-04-01), Nishizawa et al.
patent: 5677210 (1997-10-01), Park et al.
patent: 5846862 (1998-12-01), May et al.
patent: 6051473 (2000-04-01), Ishida et al.
patent: 6054355 (2000-04-01), Inumiya et al.
patent: 6391799 (2002-05-01), Di Cioccio
patent: 6495402 (2002-12-01), Yu et al.
patent: 2001/0030350 (2001-10-01), Oowaki et al.
patent: 44 47 149 (1994-12-01), None
patent: 98 00899 (1998-01-01), None
D.J., Godbey, A.H. Krist, K.D. Hobart, and M.E. Twigg, Selective Removal of Si 1-x Gex from (100) Si Using HNO3 and HK.
Hobart, K D., “Perspectives on Wafer Bonding Technology for Thin Film Devices”, Naval Research Laboratory, Washington, DC, pp. 63-64.

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