Method for making a semiconductor using corona discharge

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

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427570, 118723E, 437937, 422907, H01T 1900

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active

054241030

ABSTRACT:
A method for making a semiconductor, without using a vacuum pump or vacuum chamber, using corona discharge, which comprises the steps or: supplying a reactive gas to, at least, one electrode capable of generating corona discharge above a substrate with an RF power source under the atmosphere; irradiating ions or radicals resulted from the decomposition of said reactive gas by said corona discharge to said substrate; allowing said ions or radicals to be chemically reacted with said substrate or be diffused in said substrate.

REFERENCES:
patent: 4551353 (1985-11-01), Hower et al.
patent: 4820650 (1989-04-01), Nagae et al.
patent: 5082517 (1992-01-01), Moslehi
patent: 5101462 (1991-10-01), Suzuki

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