Method for making a semiconductor device with improved sidewall

Details Method for making a semiconductor device with improved sidewall Method for making a semiconductor device with improved sidewall

1997-03-21

2000-05-09

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

257389, 438297, 438298, H01L 21822, H01L 21265

Patent

active

060603720

ABSTRACT:
A semiconductor device (10) of the present invention has a gate (32) insulatively disposed above the substrate, source and drain regions (36, 38) disposed near the surface in the substrate adjacent opposite sides of the gate (32), and a field oxide region (26) disposed in the surface of the substrate surrounding the source and drain regions (36, 38) and defining an active moat region (20). The channel stop region (24) is disposed below the field oxide region (26) and is spaced from the active moat region (20) with a predetermined spacing.

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Silicon Processing for the VSLI ERA Stanley Wolf Lattice Press p. 21, 1990.

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