Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2007-02-27
2007-02-27
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S299000, C438S301000, C438S303000, C438S592000, C438S595000
Reexamination Certificate
active
10748545
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming a hard mask and an etch stop layer on a patterned sacrificial gate electrode layer. After first and second spacers are formed on opposite sides of that patterned sacrificial layer, the patterned sacrificial layer is removed to generate a trench that is positioned between the first and second spacers. At least part of the trench is filled with a metal layer.
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Barns Chris E.
Brask Justin K.
Chau Robert S.
Doczy Mark L.
Kavalieros Jack
Engineer Rahul D.
Nguyen Thanh
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