Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2006-07-04
2006-07-04
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S763000, C438S162000, C257S020000
Reexamination Certificate
active
07071119
ABSTRACT:
A semiconductor device includes a superlattice that, in turn, includes a plurality of stacked groups of layers. The device may also include regions for causing transport of charge carriers through the superlattice in a parallel direction relative to the stacked groups of layers. Each group of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. Moreover, the energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Accordingly, the superlattice may have a higher charge carrier mobility in the parallel direction than would otherwise be present.
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Dukovski Ilija
Hytha Marek
Kreps Scott A.
Mears Robert J.
Sow Fook Yiptong Jean Augustin Chan
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Nelms David
Nguyen Thinh T
RJ Mears, LLC
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