Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2002-10-31
2004-02-10
Cuneo, Kamand (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S287000, C438S591000, C438S770000, C438S772000, C438S785000
Reexamination Certificate
active
06689675
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to methods for making semiconductor devices, in particular, semiconductor devices that include high-k gate dielectric layers.
BACKGROUND OF THE INVENTION
MOS field-effect transistors with very thin silicon dioxide based gate dielectrics may experience unacceptable gate leakage currents. Forming the gate dielectric from certain high-k dielectric materials, instead of silicon dioxide, can reduce gate leakage. As the thickness of such a high-k gate dielectric is reduced, however, silicide formation—which may result from high temperature processing that follows gate dielectric formation—may cause the device to short through the dielectric.
Accordingly, there is a need for an improved process for making a semiconductor device that includes a high-k gate dielectric. There is a need for such a process that can produce a device that includes an ultra thin high-k gate dielectric that is not shorted through the gate dielectric. The method of the present invention provides such a process.
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Kuhn Markus
Parker Christopher G.
Zhou Ying
Cuneo Kamand
Intel Corporation
Sarkar Asok Kumar
Seeley Mark V.
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