Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2002-11-05
2004-03-30
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S591000
Reexamination Certificate
active
06713358
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to methods for making semiconductor devices, in particular, semiconductor devices that include high-k gate dielectric layers.
BACKGROUND OF THE INVENTION
MOS field-effect transistors with very thin silicon dioxide based gate dielectrics (including those consisting of a silicon dioxide/silicon oxynitride film stack) may experience unacceptable gate leakage currents. Forming the gate dielectric from certain high-k dielectric materials, instead of silicon dioxide, can reduce gate leakage. It may be difficult, however, to integrate such high-k dielectric materials with polysilicon—the preferred material for making the device's gate electrode.
Accordingly, there is a need for an improved process for making a semiconductor device that includes a high-k gate dielectric. There is a need for such a process that enables a polysilicon-based gate electrode to be formed on such a gate dielectric to create a functional device. The method of the present invention provides such a process.
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Arghavani Reza
Barlage Douglas W.
Chau Robert S.
Foley Lawrence J.
Glassman Timothy E.
Coleman W. David
Intel Corporation
Kebede Brook
Seeley Mark V.
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