Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-01-23
2007-01-23
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S143000, C438S151000, C438S197000, C438S308000, C438S471000, C438S472000, C438S473000, C438S474000, C438S475000, C438S477000, C438S591000, C438S783000, C438S785000, C438S795000, C438S906000, C438S974000, C438S216000, C438S261000, C438S287000, C438S585000, C257SE21154
Reexamination Certificate
active
10943661
ABSTRACT:
A method for making a semiconductor device is described. That method includes forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. The dielectric layer is modified so that it will be compatible with a gate electrode to be formed on the dielectric layer, and then a gate electrode is formed on the dielectric layer.
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Arghavani Reza
Chau Robert
Doczy Mark
Ahmadi Mohsen
Intel Corporation
Laleh Jalali
Lebentritt Michael
LandOfFree
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