Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-01
2006-08-01
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
Reexamination Certificate
active
07084038
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
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Brask Justin K.
Chau Robert S.
Datta Suman
Dewey Gilbert
Doczy Mark L.
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Kebede Brook
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