Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-05-25
2008-11-04
Graybill, David E (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S289000, C438S287000, C438S478000, C438S602000
Reexamination Certificate
active
07446002
ABSTRACT:
A method for making a semiconductor device may include forming a superlattice comprising a plurality of stacked groups of layers adjacent a substrate. Each group of layers of the superlattice may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include forming a high-K dielectric layer on the electrode layer, and forming an electrode layer on the high-K dielectric layer and opposite the superlattice.
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Dukovski Ilija
Halilov Samed
Huang Xiangyang
Hytha Marek
Kreps Scott A.
Allen Dyer Doppelt Milbrath & Gilchrist, P.A.
Graybill David E
MEARS Technologies, Inc.
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