Method for making a raised vertical channel transistor device

Details Method for making a raised vertical channel transistor device Method for making a raised vertical channel transistor device

2006-09-29

2008-12-16

Lindsay, Jr., Walter L (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S206000, C438S207000, C438S209000, C438S268000, C438S269000, C438S270000, C438S271000, C438S272000, C438S273000, C438S274000, C257S328000, C257S329000, C257S330000, C257S331000, C257S332000, C257S333000, C257S334000, C257SE21418

Reexamination Certificate

active

07465622

ABSTRACT:
A method for fabricating a vertical channel transistor device is provided. An opening is formed in a dielectric stack comprised of a pad nitride layer and a pad oxide layer. A plurality of epitaxial silicon growth and dry etching processes are carried out to form drain, vertical channel and source in the opening. Subsequently, sidewall gate dielectric and sidewall gate electrode are formed on the vertical channel. The present invention is suited for dynamic random access memory (DRAM) devices, particularly suited for very high-density trench-capacitor DRAM devices.

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