Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-09-18
2007-09-18
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S690000, C438S692000, C438S700000, C438S708000, C438S725000, C438S795000, C438S710000, C216S002000, C216S037000, C216S058000, C216S066000, C347S002000, C347S020000
Reexamination Certificate
active
10941404
ABSTRACT:
A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.
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Hart Brian C.
Krawczyk John W.
Money Christopher J.
Mrvos James M.
Patil Girish S.
Angadi Maki
Lexmark International Inc.
Luedeka Neely & Graham PC
Vinh Lan
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