Method for making a micro-fluid ejection device

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S690000, C438S692000, C438S700000, C438S708000, C438S725000, C438S795000, C438S710000, C216S002000, C216S037000, C216S058000, C216S066000, C347S002000, C347S020000

Reexamination Certificate

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10941404

ABSTRACT:
A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the photoresist etch mask layer is irradiated to assist in post etch stripping of the etch mask layer from the select second area. The substrate is etched to form fluid supply slots through a thickness of the substrate. At least the select second area of the etch mask layer is removed from the substrate, whereby mask layer residue formed from the select second area of the etch mask layer is significantly reduced.

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S. Wolf, Silicon Processinf for the VLSI Era, vol. 4, Lattice Press, (2002), p. 228.
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JP 03-154330A2 to Murayama Akiyo Published Jul. 2, 1991 (English abstract only).
JP 04-302427A2 to Kato Shigeki Published Oct. 26, 1992 (English abstract only).

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