Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2005-08-16
2005-08-16
Kim, Paul D (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S603110, C029S603130, C029S603140, C029S603150, C029S605000, C360S324000, C360S325000, C360S326000, C360S327000, C427S127000, C427S128000, C204S192150
Reexamination Certificate
active
06928723
ABSTRACT:
An exchange-coupled magnetic structure of a cobalt-ferrite layer adjacent a magnetic metal layer is used in magnetorestive sensors, such as spin valves or tunnel junction valves. The exchange-coupled magnetic structure is used in a pinning structure pinning the magnetization of a ferromagnetic pinned layer, or in an AP pinned layer. A low coercivity ferrite may be used in an AP free layer. Cobalt-ferrite layers may be formed by co-sputtering of Co and Fe in an oxygen/argon gas mixture, or by sputtering of a CoFe2composition target in an oxygen/argon gas mixture. Alternatively, the cobalt-ferrite layer may be formed by evaporation of Co and Fe from an alloy source or separate sources along with a flux of oxygen atoms from a RF oxygen atom beam source. Magnetoresistive sensors including cobalt-ferrite layers have small read gaps and produce large signals with high efficiency.
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Carey Matthew Joseph
Do Hoa Van
Farrow Robin Frederick Charles
Gurney Bruce Alvin
Margulies David Thomas
Kim Paul D
Lumen Intellectual Property Services Inc.
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