Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-05-15
2000-09-12
Tsai, Jey
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438592, H01L 21336, H01L 213205, H01L 214763
Patent
active
061177423
ABSTRACT:
The present invention is directed to a method for manufacturing a semiconductor device having a reduced feature size and improved electrical performance characteristics. The method includes forming at least one masking layer and forming an opening in said masking layer. The method further includes forming a metal layer above at least a portion of said masking layer and removing said masking layer to define a gate electrode comprised of a portion of said metal layer. The method also includes removing the masking layer to expose portions of the surface of the substrate and doping the exposed portions of the substrate to define at least one source or drain region.
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Gardner Mark I.
Hause Fred
Advanced Micro Devices , Inc.
Lindsay Jr. Walter L.
Tsai Jey
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