Method for making a five square vertical DRAM cell

Details Method for making a five square vertical DRAM cell Method for making a five square vertical DRAM cell

Filed on

1998-05-28

Date issued

2000-08-22

Examiner

Bowers, Charles

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

Having insulated gate

Other Related Categories

438259, H01L 218242

Type

Patent

Status

active

Patent number

061071331

Description

ABSTRACT:
Five square dynamic random access memory (DRAM) cell is prepared with a vertical transfer device with long channel length. In this construction, channel length is not affected by cell size scaling requirements.

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W.F. Richardson, et al., A Trench Transistor Cross-Point DRAM Cell; IEDM, CH2252-5/85 0000-0714, 1985; pp. 714-717.
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