Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-05-28
2000-08-22
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438259, H01L 218242
Patent
active
061071331
ABSTRACT:
Five square dynamic random access memory (DRAM) cell is prepared with a vertical transfer device with long channel length. In this construction, channel length is not affected by cell size scaling requirements.
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Furukawa Toshiharu
Hakey Mark C.
Horak David V.
Ma William H.
Mandelman Jack A.
Bowers Charles
International Business Machines - Corporation
Thompson Craig
Walter Howard J.
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