Method for making a dynamic random access memory using silicon-o

Details Method for making a dynamic random access memory using silicon-o Method for making a dynamic random access memory using silicon-o

1995-12-28

1997-05-20

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438241, 438184, 438459, H01L 2170, H01L 2700

Patent

active

056311869

ABSTRACT:
The present invention discloses a method for making a dynamic random access memory by silicon-on-insulator comprising the steps of: dividing a cell area and a peripheral area on a first silicon substrate and recessing just the cell area where a memory device is formed; forming a first insulating layer by isolation of electrical elements in order to divide an active region and a passive region; forming and patterning a first conductive layer through a contact to which the active region and a capacitor are connected on the insulating layer to form a storage node; forming a dielectric layer of the capacitor on the storage node; forming and patterning a polysilicon layer on the dielectric layer to form a storage node; forming a second insulating layer on the plate node and planarizing the insulating layer by thermal treatment; forming a third conductive layer to a predetermined thickness on the planarized insulating layer; polishing and planarizing the third conductive layer by chemical-mechanical polishing technique, using the second insulating layer as an etchstopper and bonding a second silicon substrate on the planarized third conductive layer; planarizing a backside of the first substrate by a chemical-mechanical polishing technique and exposing the active region; and forming a switching element on the forming a bit line.

REFERENCES:
patent: 4882289 (1989-11-01), Moriuchi et al.
patent: 5071783 (1991-12-01), Taguchi te al.
patent: 5096854 (1992-03-01), Saito et al.
patent: 5102819 (1992-04-01), Matsushita et al.
patent: 5286670 (1994-02-01), Kang et al.
patent: 5371032 (1994-12-01), Nishihara

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