Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-06-22
1999-09-28
Fahmy, Wael M.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438199, 438299, 438770, 438775, 438287, H01L 218234
Patent
active
059602899
ABSTRACT:
A method for forming a dual gate oxide (DGO) structure begins by forming a first oxide layer (106) within active areas (110) and (112). A protection layer (108a) is then formed over the layer (106). A mask (114) is used to allow removal of the layers (106 and 108a) from the active area (110). A thermal oxidation process is then used to form a thin second oxide layer (118) within an active area (110). Conductive gate electrodes (120a and 120b) are then formed wherein the first oxide layer (106) and the protection layer (108c) are incorporated into the gate dielectric layer of an MOS transistor (122a). The transistor (122b) has a thinner gate oxide layer that excludes the protection layer (108c).
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Bhat Navakanta
Chen Ping
Tseng Hsing-Huang
Tsui Paul G. Y.
Fahmy Wael M.
Motorola Inc.
Pham Long
Witek Keith E.
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