Method for making a dual damascene interconnect using a dual...

Details Method for making a dual damascene interconnect using a dual... Method for making a dual damascene interconnect using a dual...

2005-03-29

2005-03-29

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S723000, C438S725000

Reexamination Certificate

active

06872666

ABSTRACT:
An improved method of forming a semiconductor device is described. Initially, a structure is formed that includes first and second hard masking layers that cover a dielectric layer. A first part of the second hard masking layer and a first part of the first hard masking layer are etched to form an etched region within the hard mask that exposes a first portion of the dielectric layer. That etched region is filled with a sacrificial material. After etching through a second part of the second hard masking layer, the remainder of the sacrificial material is removed prior to subsequent processing.

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