Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-03-12
2000-11-07
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438398, H01L 218242
Patent
active
061436054
ABSTRACT:
A method of making a capacitor over a contact. The method comprises the steps of: (a) depositing an oxide layer over said contact; (b) forming a dual damascene opening in said oxide layer over said contact; (c) depositing a layer of insitu doped polysilicon over said dual damascene opening and said oxide layer; (d) depositing a layer of undoped amorphous polysilicon over said layer of insitu doped polysilicon; (e) removing said layer of undoped amorphous polysilicon and said layer of insitu doped polysilicon that is outside of said dual damascene opening; (f) removing said oxide layer to leave a dual damascene structure comprising insitu doped polysilicon and undoped amorphous polysilicon; (g) forming hemispherical grain (HSG) polysilicon on the surface of said dual damascene structure; (h) forming a dielectric layer over said dual damascene structure; and (i) forming a top electrode over said dielectric layer.
REFERENCES:
patent: 5591664 (1997-01-01), Wang et al.
patent: 5639685 (1997-06-01), Zahurak et al.
patent: 5827766 (1998-10-01), Lou
Chang Joni
Worldwide Semiconductor Manufacturing Corporation
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