Method for making a complementary metal gate electrode technolog

Details Method for making a complementary metal gate electrode technolog Method for making a complementary metal gate electrode technolog

1998-06-30

2000-10-10

Bowers, Charles

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438199, 438197, 438218, H01L 218249

Patent

active

06130123&

ABSTRACT:
A method for making a circuit device that includes a first transistor having a first metal gate electrode overlying a first gate dielectric on a first area of a semiconductor substrate. The first gate electrode has a work function corresponding to the work function of one of P-type silicon and N-type silicon. The circuit device also includes a second transistor coupled to the first transistor. The second transistor has a second metal gate electrode over a second gate dielectric on a second area of the semiconductor substrate. The second gate metal gate electrode has a work function corresponding to the work function of the other one of P-type silicon and N-type silicon.

REFERENCES:
patent: 5705411 (1998-01-01), Yamanobe et al.

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