Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-02-22
2011-02-22
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S478000, C257S024000, C257S341000, C257SE29262, C257SE21090, C257SE21418
Reexamination Certificate
active
07892924
ABSTRACT:
A method is disclosed for making a substantially charge balanced multi-nano shell drift region (MNSDR) for superjunction semiconductor devices atop a base substrate. The MNSDR has numerous concentric nano shell members NSM1, NSM2, . . . , NSMM(M>1) of alternating, substantially charge balanced first conductivity type and second conductivity type and with height NSHT. First, a bulk drift layer (BDL) is formed atop the base substrate. A substantially vertical cavity of pre-determined shape and size and with depth NSHT is then created into the top surface of BDL. The shell members NSM1, NSM2, . . . , NSMMare successively formed inside the vertical cavity, initially upon its vertical walls then moving toward its center, so as to successively fill the vertical cavity till a residual space remains therein. A semi-insulating or insulating fill-up nano plate is then formed inside the residual space to fill it up.
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Guan Lingpeng
Ho Moses
Lee Yeeheng
Alpha and Omega Semiconductor Inc.
C H Emily LLC
Richards N Drew
Singal Ankush k
Tsao Chein-Hwa
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