Method for making a capacitor

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438250, 438253, H01L 218242

Patent

active

058518703

ABSTRACT:
A novel capacitor design for use in semiconductor integrated circuits is disclosed. The capacitor includes a metal-dielectric-metal stack formed within a window and upon a conductive substrate. Contact to the top plate of the capacitor is through a window within a window, while contact to the bottom plate is achieved by a guard ring which contacts the conductive substrate.

REFERENCES:
patent: 4731696 (1988-03-01), Himes et al.
patent: 5005102 (1991-04-01), Larson
patent: 5057447 (1991-10-01), Paterson
patent: 5065220 (1991-11-01), Paterson
patent: 5086370 (1992-02-01), Yasaitis
patent: 5108941 (1992-04-01), Paterson et al.
patent: 5195017 (1993-03-01), McDonald
patent: 5244825 (1993-09-01), Coleman et al.
patent: 5290729 (1994-03-01), Hayashide et al.
patent: 5300450 (1994-04-01), Shen et al.
patent: 5304506 (1994-04-01), Porter et al.
patent: 5312769 (1994-05-01), Matsuo et al.
patent: 5326724 (1994-07-01), Wei
patent: 5338701 (1994-08-01), Hsu et al.
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5374578 (1994-12-01), Patel et al.
patent: 5418388 (1995-05-01), Okudaira et al.
Multiple layer ceramic plate with embedded conductive layers Hitachi KK 19.06.81--JP-093877; V01 (V04).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for making a capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making a capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a capacitor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2046840

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.