Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Encapsulating
Reexamination Certificate
2008-07-11
2010-11-30
Thai, Luan C (Department: 2891)
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Encapsulating
C257SE21502
Reexamination Certificate
active
07842556
ABSTRACT:
This method for sealing a cavity of a component placed in the chamber is carried out by physical vapour deposition (PVD) of germanium or silicon.
REFERENCES:
patent: 4853669 (1989-08-01), Guckel et al.
patent: 7081623 (2006-07-01), Pai et al.
patent: 2004/0248344 (2004-12-01), Partridge et al.
patent: 2005/0017313 (2005-01-01), Wan
patent: 2007/0121191 (2007-05-01), Pan
Sze S M: “VLSI Technology Second Edition,” Metallization, 1988, McGraw-Hill, Singapore, XP002405624, pp. 386-393.
Brian H. Stark et al., “A Low-Temperature Thin-Film Electroplated Metal Vacuum Package,” Journal of Microelectromechanical Systems, vol. 13, No. 2, Apr. 2004, pp. 147-157.
Andre Bernard
Arnaud Agnès
Burr & Brown
Commissariat a l''Energie Atomique
Thai Luan C
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