Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1993-07-20
1995-03-21
King, Roy V.
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427578, 427533, 4272557, 4274192, 156643, 156653, 437195, 437228, 437238, 437978, B05D 306, H01L 2102
Patent
active
053993896
ABSTRACT:
In the ozone-activated deposition of insulating layers, different growth rates can be achieved on differently constituted surfaces. When the surfaces of the structured silicon substrates lying at different levels are differently constituted or, respectively, are intentionally varied such that the SiO.sub.2 insulating layer grows more slowly on the higher surfaces than on the more deeply disposed surfaces and when deposition is carried out until the surfaces of the rapidly growing and slowly growing layer regions form a step-free, planar level, a local and global planarization is achieved.
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T. H. Daubenspeck et al., "Planarization of ULSI Topography over Variable Pattern Densities", J. Electrochem. Soc., vol. 138, No. 2, Feb. 1991, pp. 506-509.
K. Fujino et al., "Reaction Mechanism of TEOS and O.sub.3 Atmospheric Pressure CVD", Semiconductor Process Laboratory, Jun. 11-12, 1991, VMIC Conference, pp. 445-447.
D. Widmann et al., "Technologie Hochintegrierter Schaultungen", Springer-Verlag 1988, Section 3.5.5, pp. 78-81.
Gabric Zvonimir
Gschwandtner Alexander
Hieber Konrad
Spindler Oswald
Treichel Helmuth
King Roy V.
Siemens Aktiengesellschaft
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