Method for limiting slip lines in a semiconductor substrate

Details Method for limiting slip lines in a semiconductor substrate Method for limiting slip lines in a semiconductor substrate

2006-02-21

2006-02-21

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S530000, C438S550000

Reexamination Certificate

active

07001832

ABSTRACT:
A method for limiting slip lines in a semiconductor substrate including a support layer and a useful semiconductor layer that is transferred to the support layer. The method includes precipitating at least a portion of interstitial oxygen in the support layer by a series of heat treatments conducted after bonding of the useful semiconductor layer to the support layer. The heat treatments occur at a temperature and a time sufficient to reduce the generation of slip lines therein.

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