Method for joining a silicon plate to a second plate

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S456000

Reexamination Certificate

active

06955975

ABSTRACT:
A method for joining a silicon plate to a second plate, a laser beam being directed through the silicon plate at the second plate. In the process, the wavelength of the laser beam is selected in such a way that only a negligibly small amount of energy is absorbed in the silicon plate. A strongly absorbent material is hotmelted by the laser beam's energy and then produces a bond between the silicon plate and the second plate.

REFERENCES:
patent: 5010036 (1991-04-01), Calviello et al.
patent: 28 49 716 (1980-05-01), None
patent: 195 04 967 (1996-08-01), None
patent: 2 244 374 (1991-11-01), None
patent: 2244374 (1991-11-01), None
patent: WO 99/05719 (1999-02-01), None
IBM Technical Disclosure Bulletin, NN 7907681, Jul. 1979.
Henry, B.C. et al., “Semiconductor structure with infrared energy absorption layer”, IBM Technical Disclosure Bulletin, IBM Corp., New York, US, vol. 22, No. 2, Jul. 1, 1979, p. 681*.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for joining a silicon plate to a second plate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for joining a silicon plate to a second plate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for joining a silicon plate to a second plate will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3448553

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.