Method for joining a silicon plate to a second plate

Details Method for joining a silicon plate to a second plate Method for joining a silicon plate to a second plate

2005-10-18

2005-10-18

Sarkar, Asok Kumar (Department: 2829)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S456000

Reexamination Certificate

active

06955975

ABSTRACT:
A method for joining a silicon plate to a second plate, a laser beam being directed through the silicon plate at the second plate. In the process, the wavelength of the laser beam is selected in such a way that only a negligibly small amount of energy is absorbed in the silicon plate. A strongly absorbent material is hotmelted by the laser beam's energy and then produces a bond between the silicon plate and the second plate.

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IBM Technical Disclosure Bulletin, NN 7907681, Jul. 1979.
Henry, B.C. et al., “Semiconductor structure with infrared energy absorption layer”, IBM Technical Disclosure Bulletin, IBM Corp., New York, US, vol. 22, No. 2, Jul. 1, 1979, p. 681*.

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